Volume 3, Issue 2, December 2017, Page: 46-50
Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires
Jinyou Xu, Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, The People’s Republic of China
Received: Jun. 19, 2017;       Accepted: Jul. 17, 2017;       Published: Aug. 9, 2017
DOI: 10.11648/j.nsnm.20170302.12      View  1391      Downloads  98
Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.
Silicon Nanowires, Optical Materials and Properties, Luminescence, In2Se3
To cite this article
Jinyou Xu, Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires, Nanoscience and Nanometrology. Vol. 3, No. 2, 2017, pp. 46-50. doi: 10.11648/j.nsnm.20170302.12
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