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Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires

Received: 19 June 2017     Accepted: 17 July 2017     Published: 9 August 2017
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Abstract

Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.

Published in Nanoscience and Nanometrology (Volume 3, Issue 2)
DOI 10.11648/j.nsnm.20170302.12
Page(s) 46-50
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Silicon Nanowires, Optical Materials and Properties, Luminescence, In2Se3

References
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Cite This Article
  • APA Style

    Jinyou Xu. (2017). Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanoscience and Nanometrology, 3(2), 46-50. https://doi.org/10.11648/j.nsnm.20170302.12

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    ACS Style

    Jinyou Xu. Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanosci. Nanometrol. 2017, 3(2), 46-50. doi: 10.11648/j.nsnm.20170302.12

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    AMA Style

    Jinyou Xu. Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires. Nanosci Nanometrol. 2017;3(2):46-50. doi: 10.11648/j.nsnm.20170302.12

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  • @article{10.11648/j.nsnm.20170302.12,
      author = {Jinyou Xu},
      title = {Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires},
      journal = {Nanoscience and Nanometrology},
      volume = {3},
      number = {2},
      pages = {46-50},
      doi = {10.11648/j.nsnm.20170302.12},
      url = {https://doi.org/10.11648/j.nsnm.20170302.12},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nsnm.20170302.12},
      abstract = {Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.},
     year = {2017}
    }
    

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  • TY  - JOUR
    T1  - Room-Temperature Si-Compatible Red Light Emission from In2Se3-Decorated Silicon Nanowires
    AU  - Jinyou Xu
    Y1  - 2017/08/09
    PY  - 2017
    N1  - https://doi.org/10.11648/j.nsnm.20170302.12
    DO  - 10.11648/j.nsnm.20170302.12
    T2  - Nanoscience and Nanometrology
    JF  - Nanoscience and Nanometrology
    JO  - Nanoscience and Nanometrology
    SP  - 46
    EP  - 50
    PB  - Science Publishing Group
    SN  - 2472-3630
    UR  - https://doi.org/10.11648/j.nsnm.20170302.12
    AB  - Next generation of Si-based nano-optoelectronic devices calls for monolithic integration of photonics with silicon. Here we report the synthesis of silicon nanowires with In2Se3 nanoflakes decorated by a one-step chemical vapor deposition under atmospheric pressure. These nanowires show pronounced red emission with wavelength in the range of 620-850 nm at room temperature under illumination of continuous wave laser. The strong emission originates from the photoluminescence of ultra-thin In2Se3 nanoflakes in view of the nanoscale footprint and atomically-thin thicknesses as well as high single-quality of the In2Se3 nanoflakes. This work demonstrated that nanoscale atomically-thin In2Se3 flakes can grow epitaxially on the surface of single-crystalline silicon nanowires and serves as strong red light emission centers for silicon nanowires. Therefore, these nanowires are promising to be used as a Si-compatible red light emission material for Si-based integrated nano-optoelectronic devices.
    VL  - 3
    IS  - 2
    ER  - 

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Author Information
  • Key Laboratory of Advanced Micro/Nano Functional Materials, School of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, The People’s Republic of China

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